Medverkande i utredning : Daniel Johannesson

Johannesson, Daniel, Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications, 2021, KTH Royal Institute of Technology

Johannesson, Daniel, Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications [Elektronisk resurs], 2021, KTH Royal Institute of Technology

Jacobs, Keijo, Johannesson, Daniel, Norrga, Staffan och Nee, Hans-Peter, MMC Converter Cells Employing Ultrahigh-Voltage SiC Bipolar Power Semiconductors [Elektronisk resurs], 2017, Institute of Electrical and Electronics Engineers (IEEE)

Johannesson, Daniel, Nawaz, Muhammad, Jacobs, Keijo, Norrga, Staffan och Nee, Hans-Peter, Potential of Ultra-High Voltage Silicon Carbide Semiconductor Devices [Elektronisk resurs], 2016, IEEE conference proceedings

Energi för det globala samhället på 2000-talet, Samtal inför ett nytt årtusende, 2000, s. 149–167, Johannesson, Daniel, Stockholm : Fritzes offentliga publikationer, 2000

Bäckström, Göran och Johannesson, Daniel, Internet ombord : vision eller verklighet?, 1997, Ingenjörs- och sjöbefälsskolan vid Chalmers tekniska högsk., Göteborg

Jacobs, Keijo, Heinig, Stefanie, Johannesson, Daniel, Norrga, Staffan och Nee, Hans-Peter, Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission, IEEE transactions on power electronics, 2021, 36 nr 8, s. 8887–8906, : Institute of Electrical and Electronics Engineers (IEEE)

Johannesson, Daniel, Nawaz, Muhammad och Nee, Hans-Peter, Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study, IEEE Open Journal of Power Electronics, 2021, 2, s. 304–314, : Institute of Electrical and Electronics Engineers (IEEE)

Johannesson, Daniel, Nawaz, Muhammad och Nee, Hans-Peter, Dynamic Avalanche Limit and Current Filamentation Onset Limit in 4H-Silicon Carbide High-Voltage Diodes, IEEE Journal of Emerging and Selected Topics in Power Electronics, 2021,, s. 1–1, : Institute of Electrical and Electronics Engineers (IEEE)

Johannesson, Daniel, Nawaz, Muhammad, Norrga, Staffan och Nee, Hans-Peter, Evaluation of Ultrahigh-Voltage 4H-SiC Gate Turn-Off Thyristors and Insulated-Gate Bipolar Transistors for High-Power Applications, IEEE transactions on power electronics, 2021, 37 nr 4, s. 4133–4147, : Institute of Electrical and Electronics Engineers (IEEE)

Johannesson, Daniel, Nawaz, Muhammad, Norrga, Staffan, Hallén, Anders och Nee, Hans-Peter, Static and Dynamic Performance Prediction of Ultra-High-Voltage Silicon Carbide Insulated-Gate Bipolar Transistors, IEEE transactions on power electronics, 2021, 36 nr 5, s. 5874–5891

Johannesson, Daniel, Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications, 2021, KTH Royal Institute of Technology

Johannesson, Daniel, Jacobs, Keijo, Norrga, Staffan, Hallén, Anders, Nawaz, Muhammad och Nee, Hans-Peter, Wide-Range Prediction of Ultra-High Voltage SiC IGBT Static Performance Using Calibrated TCAD Model, Materials Science Forum, 2020,, s. 911–916

Johannesson, Daniel, Nawaz, Muhammad och Nee, Hans-Peter, TCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction Transistors, Materials Science Forum, 2019,, s. 670–673, : Trans Tech Publications, Ltd.

Johannesson, Daniel, Nawaz, Muhammad och Ilves, Kalle, Assessment of 10 kV, 100 A Silicon Carbide MOSFET Power Modules, IEEE transactions on power electronics, 2018, 33 nr 6, s. 5215–5225, : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Jacobs, Keijo, Johannesson, Daniel, Norrga, Staffan och Nee, Hans-Peter, MMC Converter Cells Employing Ultrahigh-Voltage SiC Bipolar Power Semiconductors, 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE EUROPE), 2017, : Institute of Electrical and Electronics Engineers (IEEE)

Johannesson, Daniel och Nawaz, Muhammad, Analytical PSpice model for SiC MOSFET based high power modules, Microelectronics Journal, 2016, 53, s. 167–176, : Elsevier

Johannesson, Daniel och Nawaz, Muhammad, Development of a Simple Analytical PSpice Model for SiC-Based BJT Power Modules, IEEE transactions on power electronics, 2016, 31 nr 6, s. 4517–4525, : IEEE Press

Johannesson, Daniel, Nawaz, Muhammad, Jacobs, Keijo, Norrga, Staffan och Nee, Hans-Peter, Potential of Ultra-High Voltage Silicon Carbide Semiconductor Devices, 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2016,, s. 253–258, : IEEE conference proceedings

Sadik, Diane-Perle, Heinig, Stefanie, Jacobs, Keijo, Johannesson, Daniel, Lim, Jang-Kwon, Nawaz, Muhammad, Dijkhuizen, Frans, Bakowski, Mietek, Norrga, Staffan och Nee, Hans-Peter, Investigation of the surge current capability of the body diode of SiC MOSFETs for HVDC applications, 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe), 2016, : IEEE

Johannesson, Daniel och Nawaz, Muhammad, Assessment of PSpice model for commercial SiC MOSFET power modules, 2015

Johannesson, Daniel och Nawaz, Muhammad, Development of a PSpice Model for SiC MOSFET Power Modules, 2015

Johannesson, Daniel och Nawaz, Muhammad, Development of a PSPICE Model for 1200 V/800 A SiC Bipolar Junction Transistor Power Module, 2014

Jacobs, Keijo, Heinig, Stefanie, Johannesson, Daniel, Norrga, Staffan och Nee, Hans-Peter, Comparative Evaluation of Voltage Source Converters with Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission